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J175_D26Z

J175_D26Z

電氣特性 Features

Configuration:Single
Channel Type:P
Maximum Gate Source Voltage:30 V
Maximum Drain Gate Voltage:-30 V
Operating Temperature:-55 to 150 ℃
Mounting:Through Hole
Rad Hard:No
P溝道場效應(yīng)管 更新于 2025-12-04 Tag標簽:P溝道場效應(yīng)管

IRF7410

IRF7410

電氣特性 Features

  • P溝道功率MOS管
  • Vbrdss: -12V
  • Vgs: 8V
  • RDS(on) Max@4.5V: 7.0mΩ
  • Qg(Typ): 91.0nC
  • Rth(JC): 50 (JA)K/W
P溝道場效應(yīng)管 更新于 2025-12-04 Tag標簽:P溝道場效應(yīng)管

MMBFJ270

MMBFJ270

電氣特性 Features

Configuration:Single
Channel Type:P
Maximum Gate Source Voltage:30 V
Maximum Drain Gate Voltage:-30 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
P溝道場效應(yīng)管 更新于 2025-12-04 Tag標簽:P溝道場效應(yīng)管

J177_D27Z

J177_D27Z

電氣特性 Features

Configuration:Single
Channel Type:P
Maximum Gate Source Voltage:30 V
Maximum Drain Gate Voltage:-30 V
Operating Temperature:-55 to 150 ℃
Mounting:Through Hole
Rad Hard:No
P溝道場效應(yīng)管 更新于 2025-12-04 Tag標簽:P溝道場效應(yīng)管

IRF9Z34NS

電氣特性 Features

  • P溝道功率MOS管
  • Vbrdss: -55V
  • Vgs: 20V
  • RDS(on) Max@10V: 100.0mΩ
  • Qg(Typ): 23.3nC
  • Rth(JC): 2.2K/W
  • Power Dissipation@TC 25C: 68W
  • Id@TC 25C: 19A
P溝道場效應(yīng)管 更新于 2025-12-04 Tag標簽:P溝道場效應(yīng)管

MMBFJ271

MMBFJ271

電氣特性 Features

Configuration:Single
Channel Type:P
Maximum Gate Source Voltage:30 V
Maximum Drain Gate Voltage:-30 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
P溝道場效應(yīng)管 更新于 2025-12-04 Tag標簽:P溝道場效應(yīng)管

IRF5803D2

IRF5803D2

電氣特性 Features

  • 集成肖特基二極管的P溝道功率MOS管
  • Vbrdss: -40V
  • Vgs: 20V
  • RDS(on) Max@10V: 112.0mΩ
  • RDS(on) Max@4.5V: 190.0mΩ
  • Qg(Typ): 25.0nC
  • Rth(JC): 62.5 (JA)K/W
P溝道場效應(yīng)管 更新于 2025-12-04 Tag標簽:P溝道場效應(yīng)管

PMBFJ174,215

PMBFJ174,215

電氣特性 Features

Configuration:Single
Channel Type:P
Maximum Drain Source Voltage:30 V
Maximum Continuous Drain Current:135 mA
Maximum Gate Source Voltage:30 V
Maximum Drain Gate Voltage:30 V
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
P溝道場效應(yīng)管 更新于 2025-12-04 Tag標簽:P溝道場效應(yīng)管

IRF6216

IRF6216

電氣特性 Features

  • P溝道功率MOS管
  • Vbrdss: -150V
  • Vgs: 20V
  • RDS(on) Max@10V: 240.0mΩ
  • Qg(Typ): 33.0nC
  • Rth(JC): 20K/W
P溝道場效應(yīng)管 更新于 2025-12-04 Tag標簽:P溝道場效應(yīng)管

IRFR5305

電氣特性 Features

  • P溝道功率MOS管
  • Vbrdss: -55V
  • Vgs: 20V
  • RDS(on) Max@10V: 65.0mΩ
  • Qg(Typ): 42.0nC
  • Rth(JC): 1.4K/W
  • Power Dissipation@TC 25C: 89W
  • Id@TC 25C: -28A
P溝道場效應(yīng)管 更新于 2025-12-04 Tag標簽:P溝道場效應(yīng)管

IRFHS9301

電氣特性 Features

  • P溝道功率MOS管
  • Vbrdss: -30V
  • Vgs: 20V
  • RDS(on) Max@10V: 37.0m?
  • RDS(on) Max@4.5V: 65.0mΩ
  • Qg(Typ): 6.9nC
  • Rth(JC): 13K/W
  • Id@TC 25C: -13A
P溝道場效應(yīng)管 更新于 2025-12-04 Tag標簽:P溝道場效應(yīng)管

IRF9332

IRF9332

電氣特性 Features

  • P溝道功率MOS管
  • Vbrdss: -30V
  • Vgs: 20V
  • RDS(on) Max@10V: 17.5m?
  • RDS(on) Max@4.5V: 28.1mΩ
  • Qg(Typ): 14.0nC
  • Rth(JC): 50 (JA)K/W
P溝道場效應(yīng)管 更新于 2025-12-04 Tag標簽:P溝道場效應(yīng)管

IRF9530NS

電氣特性 Features

  • P溝道功率MOS管
  • Vbrdss: -100V
  • Vgs: 20V
  • RDS(on) Max@10V: 200.0mΩ
  • Qg(Typ): 38.7nC
  • Rth(JC): 1.9K/W
  • Power Dissipation@TC 25C: 3.8W
  • Id@TC 25C: -14A
P溝道場效應(yīng)管 更新于 2025-12-04 Tag標簽:P溝道場效應(yīng)管

PMBFJ177,215

PMBFJ177,215

電氣特性 Features

Configuration:Single
Channel Type:P
Maximum Drain Source Voltage:30 V
Maximum Continuous Drain Current:20 mA
Maximum Gate Source Voltage:30 V
Maximum Drain Gate Voltage:30 V
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
P溝道場效應(yīng)管 更新于 2025-12-04 Tag標簽:P溝道場效應(yīng)管

IRFHM9391

電氣特性 Features

  • P溝道功率MOS管
  • Vbrdss: -30V
  • Vgs: 25V
  • RDS(on) Max@10V: 14.6mΩ
  • RDS(on) Max@4.5V: 22.5mΩ
  • Qg(Typ): 32.0nC
  • Rth(JC): 3.8K/W
  • Power Dissipation@TC 25C: 33W
  • Id@TC 25C: -38A
P溝道場效應(yīng)管 更新于 2025-12-04 Tag標簽:P溝道場效應(yīng)管