更新于 2025-12-09電氣特性 Features
- P溝道功率MOS管
- Vbrdss: -30V
- Vgs: 25V
- RDS(on) Max@10V: 14.6mΩ
- RDS(on) Max@4.5V: 22.5mΩ
- Qg(Typ): 32.0nC
- Rth(JC): 3.8K/W
- Power Dissipation@TC 25C: 33W
- Id@TC 25C: -38A
相關(guān)文章
- P溝道功率MOS管,Vbrdss: -150V,Vgs: 20V,RDS(on) Max@10V: 150.0mΩ,Qg(Typ): 21.0nC,Rth(JC): 0.61K/W,Power Dissipation@TC 25C: 250W,Id@TC 25C: -27A
- 集成肖特基二極管的P溝道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: 270.0mΩ,Qg(Typ): 5.4nC,Rth(JC): 100 (JA)K/W
- P溝道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 60.0m?Ω,Qg(Typ): 120.0nC,Rth(JC): 0.75K/W,Power Dissipation@TC 25C: 200W,Id@TC 25C: -40A
電氣特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 40 V |
| Maximum Drain Gate Voltage: | -40 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
電氣特性 Features
電氣特性 Features
電氣特性 Features
電氣特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |