更新于 2025-12-09電氣特性 Features
- P溝道功率MOS管
- Vbrdss: -55V
- Vgs: 20V
- RDS(on) Max@10V: 175.0mΩ
- Qg(Typ): 12.7nC
- Rth(JC): 3.3K/W
- Power Dissipation@TC 25C: 45W
- Id@TC 25C: -12A
相關(guān)文章
- P溝道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 205.0mΩ,Qg(Typ): 38.7nC,Rth(JC): 1.9K/W,Power Dissipation@TC 25C: 66W,Id@TC 25C: 13A
- P溝道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 98.0m?,RDS(on) Max@4.5V: 165.0mΩ,Qg(Typ): 9.5nC,Rth(JC): 100 (JA)K/W
- P溝道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 117.0mΩ,Qg(Typ): 64.7nC,Rth(JC): 1.1K/W,Power Dissipation@TC 25C: 3.8W,Id@TC 25C: -23A
- P溝道功率MOS管,Vbrdss: -55V,Vgs: 20V,RDS(on) Max@10V: 100.0mΩ,Qg(Typ): 23.3nC,Rth(JC): 2.2K/W,Power Dissipation@TC 25C: 68W,Id@TC 25C: -19A
電氣特性 Features
電氣特性 Features
電氣特性 Features
電氣特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |