更新于 2025-12-09
電氣特性 Features
- P溝道功率MOS管
- Vbrdss: -20V
- Vgs: 12V
- RDS(on) Max@4.5V: 8.2mΩ
- Qg(Typ): 87.0nC
- Rth(JC): 50 (JA)K/W
IRF7425
相關(guān)文章
- P溝道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 2.9mΩ,RDS(on) Max@4.5V: 4.8m?,Qg(Typ): 130.0nC,Rth(JC): 1.1K/W,Power Dissipation@TC 25C: 113W
- P溝道功率MOS管,Vbrdss: -40V,Vgs: 20V,RDS(on) Max@10V: 112.0mΩ,RDS(on) Max@4.5V: 190.0mΩ,Qg(Typ): 25.0nC,Rth(JC): 62.5 (JA)K/W
- P溝道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 90.0mΩ,RDS(on) Max@4.5V: 150.0mΩ,Qg(Typ): 20.0nC,Rth(JC): 70 (JA)K/W
- P溝道功率MOS管,Vbrdss: -12V,Vgs: 8V,RDS(on) Max@4.5V: 7.0mΩ,Qg(Typ): 91.0nC,Rth(JC): 50 (JA)K/W
電氣特性 Features
電氣特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |