更新于 2025-12-06電氣特性 Features
- P溝道功率MOS管
- Vbrdss: -20V
- Vgs: 12V
- RDS(on) Max@4.5V: 600.0mΩ
- Qg(Typ): 2.4nC
- Rth(JC): 230 (JA)K/W
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- P溝道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 117.0mΩ,Qg(Typ): 64.7nC,Rth(JC): 1.1K/W,Power Dissipation@TC 25C: 3.8W,Id@TC 25C: -23A
- P溝道功率MOS管,Vbrdss: -55V,Vgs: 20V,RDS(on) Max@10V: 100.0mΩ,Qg(Typ): 23.3nC,Rth(JC): 2.7K/W,Power Dissipation@TC 25C: 56W,Id@TC 25C: -17A
- P溝道功率MOS管,Vbrdss: -12V,Vgs: 8V,RDS(on) Max@4.5V: 50.0mΩ,Qg(Typ): 10.0nC,Rth(JC): 100 (JA)K/W
- P溝道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 64.0mΩ,RDS(on) Max@4.5V: 103.0mΩ,Qg(Typ): 4.8nC,Rth(JC): 100 (JA)K/W