更新于 2025-12-09
電氣特性 Features
- P溝道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 13.5mΩ
- RDS(on) Max@4.5V: 22.0mΩ
- Qg(Typ): 75nC
- Rth(JC): 50 (JA)K/W
IRF7424PBF-1
相關(guān)文章
- P溝道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 205mΩ,Qg(Typ): 38.7nC,Rth(JC): 1.9K/W,Power Dissipation@TC 25C: 66W,Id@TC 25C: -8.2A
- P溝道功率MOS管,Vbrdss: -55V,Vgs: 20V,RDS(on) Max@10V: 105mΩ,RDS(on) Max@4.5V: 170mΩ,Qg(Typ): 31nC,Rth(JC): 1.9K/W,Power Dissipation@TC 25C: 79W,Id@TC 25C: -14A
- P溝道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: 135.0mΩ,Qg(Typ): 2.9nC,Rth(JC): 100 (JA)K/W
電氣特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
電氣特性 Features
電氣特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | 30 V |
| Operating Temperature: | -55 to 200 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |