更新于 2025-12-09電氣特性 Features
- P溝道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 4.6m?
- RDS(on) Max@4.5V: 7.1mΩ
- Qg(Typ): 58.0nC
- Rth(JC): 1.6K/W
- Id@TC 25C: -40A
相關(guān)文章
- P溝道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: 200.0mΩ,Qg(Typ): 5.8nC,Rth(JC): 75 (JA)K/W
- P溝道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 13.5mΩ,RDS(on) Max@4.5V: 22.0mΩ,Qg(Typ): 75nC,Rth(JC): 50 (JA)K/W
- P溝道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 70.0mΩ,RDS(on) Max@4.5V: 130.0mΩ,Qg(Typ): 27nC,Rth(JC): 50 (JA)K/W
- P溝道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: 40.0mΩ,Qg(Typ): 33.3nC,Rth(JC): 50 (JA)K/W
電氣特性 Features
電氣特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |