更新于 2025-12-06
電氣特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 40 V |
| Maximum Drain Gate Voltage: | -40 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
MMBF5460
相關文章
- P溝道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 4.6m?,RDS(on) Max@4.5V: 7.1mΩ,Qg(Typ): 58.0nC,Rth(JC): 1.6K/W,Id@TC 25C: -40A
- P溝道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 2.9mΩ,RDS(on) Max@4.5V: 4.8m?,Qg(Typ): 130.0nC,Rth(JC): 1.1K/W,Power Dissipation@TC 25C: 113W
- P溝道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 60.0m?Ω,Qg(Typ): 120.0nC,Rth(JC): 0.75K/W,Power Dissipation@TC 25C: 200W,Id@TC 25C: -40A
- P溝道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 40.0m?,RDS(on) Max@4.5V: 66.0mΩ,Qg(Typ): 12.0nC,Rth(JC): 62.5 (JA)K/W
電氣特性 Features
電氣特性 Features
電氣特性 Features
電氣特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |