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BC556BTFR

BC556BTFR

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:65 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:200@2mA@5V
Maximum Operating Frequency:150(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.3@0.5mA@10mA|0.65@5mA@100mA V
Maximum Collector Base Voltage:80 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:500 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC849BE6327

BC849BE6327

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:30 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:200@2mA@5V
Maximum Operating Frequency:250(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.25@0.5mA@10mA|0.6@5mA@100mA V
Maximum Collector Base Voltage:30 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:330 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC847B,215

BC847B,215

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:200@2mA@5V
Maximum Operating Frequency:100(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.2@0.5mA@10mA|0.4@5mA@100mA V
Maximum Collector Base Voltage:50 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:250 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2SC3647T-TD-E

電氣特性 Features

  • 功率晶體管
  • Trans GP BJT NPN 100V 2A
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2N5551TFR

2N5551TFR

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:160 V
Maximum DC Collector Current:0.6 A
Minimum DC Current Gain:80@1mA@5V|80@10mA@5V|30@50mA@5V
Maximum Operating Frequency:300 MHz
Maximum Collector Emitter Saturation Voltage:0.15@1mA@10mA|0.2@5mA@50mA V
Maximum Collector Base Voltage:180 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:625 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC858B E6327

BC858B E6327

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:30 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:220@2mA@5V
Maximum Operating Frequency:250(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.3@0.5mA@10mA|0.65@5mA@100mA V
Maximum Collector Base Voltage:30 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:330 mW
Mounting:Surface Mount
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2SC4027T-TL-H

2SC4027T-TL-H

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:160 V
Maximum DC Collector Current:1.5 A
Minimum DC Current Gain:200@100mA@5V
Maximum Operating Frequency:120(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.45@50mA@500mA V
Maximum Collector Base Voltage:180 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:1000 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC556BTF

BC556BTF

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:65 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:200@2mA@5V
Maximum Operating Frequency:150(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.3@0.5mA@10mA|0.65@5mA@100mA V
Maximum Collector Base Voltage:80 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:500 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC847QASX

電氣特性 Features

Type:NPN
Pin Count:6
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:200@2mA@5V
Maximum Collector Emitter Saturation Voltage:0.1@0.5mA@10mA|0.3@5mA@100mA V
Maximum Collector Base Voltage:50 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:350 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2N4401TFR

2N4401TFR

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:40 V
Maximum DC Collector Current:0.6 A
Minimum DC Current Gain:20@0.1mA@1V|40@1mA@1V|80@10mA@1V|100@150mA@1V|40@500mA@2V
Maximum Operating Frequency:250(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.4@15mA@150mA|0.75@50mA@500mA V
Maximum Collector Base Voltage:60 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:625 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2N5038G

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:150 V
Maximum DC Collector Current:20 A
Minimum DC Current Gain:20@12A@5V
Maximum Collector Emitter Saturation Voltage:2.5@5A@20A V
Maximum Collector Base Voltage:150 V
Operating Temperature:-65 to 200 ℃
Maximum Power Dissipation:140000 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2SA1020RLRAG

2SA1020RLRAG

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:50 V
Maximum DC Collector Current:2 A
Minimum DC Current Gain:70@500mA@2V|40@1.5A@2V
Maximum Operating Frequency:100(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.5@50mA@1A V
Maximum Collector Base Voltage:50 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:900 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC857ALT1G

BC857ALT1G

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:125@2mA@5V
Maximum Operating Frequency:100(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.3@0.5mA@10mA|0.65@5mA@100mA V
Maximum Collector Base Voltage:50 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:300 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC847CWT3G

BC847CWT3G

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:420@2mA@5V
Maximum Operating Frequency:100(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.25@0.5mA@10mA|0.6@5mA@100mA V
Maximum Collector Base Voltage:50 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:150 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2N4124G

2N4124G

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:25 V
Maximum DC Collector Current:0.2 A
Minimum DC Current Gain:120@2mA@1V|60@50mA@1V
Maximum Operating Frequency:300(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.3@5mA@50mA V
Maximum Collector Base Voltage:30 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:625 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管