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2SD1802S-E

2SD1802S-E

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:50 V
Maximum DC Collector Current:5 A
Minimum DC Current Gain:140@100mA@2V
Maximum Operating Frequency:150(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.0005@100mA@2A V
Maximum Collector Base Voltage:60 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:1000 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

2SC3649T-TD-E

電氣特性 Features

Type:NPN
Pin Count:4
Maximum Collector Emitter Voltage:160 V
Maximum DC Collector Current:1.5 A
Minimum DC Current Gain:200@100mA@5V
Maximum Operating Frequency:120(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.45@50mA@500mA V
Maximum Collector Base Voltage:180 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:500 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

BC848CE6433HTMA1

BC848CE6433HTMA1

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:30 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:420@2mA@5V
Maximum Operating Frequency:250(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.25@0.5mA@10mA|0.6@5mA@100mA V
Maximum Collector Base Voltage:30 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:330 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

2SB1203S-E

2SB1203S-E

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:50 V
Maximum DC Collector Current:5 A
Minimum DC Current Gain:140@0.5A@2V
Maximum Operating Frequency:130(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.55@0.15A@3A V
Maximum Collector Base Voltage:60 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:1000 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

BC846CMTF

BC846CMTF

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:65 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:420@2mA@5V
Maximum Operating Frequency:300(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.25@0.5mA@10mA|0.6@5mA@100mA V
Maximum Collector Base Voltage:80 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:310 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

BC55PASX

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:60 V
Minimum DC Current Gain:63@0.15A@2V
Maximum Collector Emitter Saturation Voltage:0.5@500mA@50mA V
Maximum Collector Base Voltage:60 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:420 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

2N5551TF

2N5551TF

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:160 V
Maximum DC Collector Current:0.6 A
Minimum DC Current Gain:80@1mA@5V|80@10mA@5V|30@50mA@5V
Maximum Operating Frequency:300 MHz
Maximum Collector Emitter Saturation Voltage:0.15@1mA@10mA|0.2@5mA@50mA V
Maximum Collector Base Voltage:180 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:625 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

2SC4489T-AN

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:100 V
Maximum DC Collector Current:2 A
Minimum DC Current Gain:200@100mA@5V
Maximum Operating Frequency:120(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.4@100mA@1A V
Maximum Collector Base Voltage:120 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:1000 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

BC547B

BC547B

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:200@2mA@5V
Maximum Operating Frequency:300(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.25@0.5mA@10mA|0.6@5mA@100mA V
Maximum Collector Base Voltage:50 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:500 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

2PD601ART,235

2PD601ART,235

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:50 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:90@100mA@2V|210@2mA@10V
Maximum Operating Frequency:100(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.25@10mA@100mA V
Maximum Collector Base Voltage:60 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:250 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

BC857BLT1G

BC857BLT1G

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:220@2mA@5V
Maximum Operating Frequency:100(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.3@0.5mA@10mA|0.65@5mA@100mA V
Maximum Collector Base Voltage:50 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:300 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

2N4401G

2N4401G

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:40 V
Maximum DC Collector Current:0.6 A
Minimum DC Current Gain:20@0.1mA@1V|40@1mA@1V|80@10mA@1V|100@150mA@1V|40@500mA@2V
Maximum Operating Frequency:250(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.4@15mA@150mA|0.75@50mA@500mA V
Maximum Collector Base Voltage:60 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:625 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

BC850CE6327HTSA1

BC850CE6327HTSA1

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:420@2mA@5V
Maximum Operating Frequency:250(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.25@0.5mA@10mA|0.6@5mA@100mA V
Maximum Collector Base Voltage:50 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:330 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

2N3906G

2N3906G

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:40 V
Maximum DC Collector Current:0.2 A
Minimum DC Current Gain:60@0.1mA@1V|80@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V
Maximum Operating Frequency:250(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.25@1mA@10mA|0.4@5mA@50mA V
Maximum Collector Base Voltage:40 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:625 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

2N5401G

2N5401G

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:150 V
Maximum DC Collector Current:0.6 A
Minimum DC Current Gain:50@1mA@5V|60@10mA@5V|50@50mA@5V
Maximum Operating Frequency:300 MHz
Maximum Collector Emitter Saturation Voltage:0.2@1mA@10mA|0.5@5mA@50mA V
Maximum Collector Base Voltage:160 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:625 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管