更新于 2025-12-06電氣特性 Features
- P溝道功率MOS管
- Vbrdss: -55V
- Vgs: 20V
- RDS(on) Max@10V: 60.0mΩ
- Qg(Typ): 42.0nC
- Rth(JC): 1.4K/W
- Power Dissipation@TC 25C: 110W
- Id@TC 25C: -31A
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- P溝道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 20.0m?,RDS(on) Max@4.5V: 35.0mΩ,Qg(Typ): 61.0nC,Rth(JC): 50 (JA)K/W