更新于 2025-12-09電氣特性 Features
- P溝道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 600.0mΩ
- RDS(on) Max@4.5V: 1000.0mΩ
- Qg(Typ): 3.4nC
- Rth(JC): 230 (JA)K/W
相關(guān)文章
- P溝道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: 600.0mΩ,Qg(Typ): 2.4nC,Rth(JC): 230 (JA)K/W
- P溝道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 6.6m?,RDS(on) Max@4.5V: 10.2mΩ,Qg(Typ): 31.0nC,Rth(JC): 50 (JA)K/W
- P溝道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 20.0mΩ,RDS(on) Max@4.5V: 35.0mΩ,Qg(Typ): 61.0nC,Rth(JC): 50 (JA)K/W
- P溝道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: 31.0mΩ,Qg(Typ): 12.0nC,Rth(JC): 13K/W,Power Dissipation@TC 25C: 9.6W,Id@TC 25C: -15A
- P溝道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 70.0mΩ,RDS(on) Max@4.5V: 130.0mΩ,Qg(Typ): 27nC,Rth(JC): 50 (JA)K/W