更新于 2025-12-09
電氣特性 Features
- P溝道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 13.5m?
- RDS(on) Max@4.5V: 22.0mΩ
- Qg(Typ): 75.0nC
- Rth(JC): 50 (JA)K/W
IRF7424
相關(guān)文章
- P溝道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 165.0mΩ,RDS(on) Max@4.5V: 270.0mΩ,Qg(Typ): 2.0nC,Rth(JC): 100 (JA)K/W
- P溝道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 17.5m?,RDS(on) Max@4.5V: 28.1mΩ,Qg(Typ): 14.0nC,Rth(JC): 50 (JA)K/W
- P溝道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 117.0mΩ,Qg(Typ): 64.7nC,Rth(JC): 1.1K/W,Power Dissipation@TC 25C: 140W,Id@TC 25C: -23A
- P溝道功率MOS管,Vbrdss: -30V,Vgs: 25V,RDS(on) Max@10V: 19.4mΩ,Qg(Typ): 14.0nC,Rth(JC): 50 (JA)K/W
- P溝道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 480.0mΩ,Qg(Typ): 18.0nC,Rth(JC): 3.2K/W,Power Dissipation@TC 25C: 39W,Id@TC 25C: -6.5A