更新于 2025-12-05電氣特性 Features
- P溝道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 165.0mΩ
- RDS(on) Max@4.5V: 270.0mΩ
- Qg(Typ): 2.0nC
- Rth(JC): 100 (JA)K/W
相關(guān)文章
- P溝道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 98.0mΩ,RDS(on) Max@4.5V: 165.0mΩ,Qg(Typ): 11.0nC,Rth(JC): 62.5 (JA)K/W
- P溝道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 60.0mΩ,Qg(Typ): 120.0nC,Rth(JC): 0.75K/W,Power Dissipation@TC 25C: 200W,Id@TC 25C: -40A
- P溝道功率MOS管,Vbrdss: -150V,Vgs: 20V,RDS(on) Max@10V: 580.0mΩ,Qg(Typ): 44.0nC,Rth(JC): 1.4K/W,Power Dissipation@TC 25C: 110W,Id@TC 25C: 13A
- P溝道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 205.0mΩ,Qg(Typ): 38.7nC,Rth(JC): 1.9K/W,Power Dissipation@TC 25C: 66W,Id@TC 25C: 13A
- P溝道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 117.0mΩ,Qg(Typ): 64.7nC,Rth(JC): 1.1K/W,Power Dissipation@TC 25C: 3.8W,Id@TC 25C: -23A