更新于 2025-12-09電氣特性 Features
- P溝道功率MOS管
- Vbrdss: -55V
- Vgs: 20V
- RDS(on) Max@10V: 175.0mΩ
- Qg(Typ): 12.7nC
- Rth(JC): 3.3K/W
- Power Dissipation@TC 25C: 38W
- Id@TC 25C: 11A
相關(guān)文章
- P溝道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: 135.0mΩ,Qg(Typ): 2.9nC,Rth(JC): 100 (JA)K/W
- P溝道功率MOS管,Vbrdss: -55V,Vgs: 20V,RDS(on) Max@10V: 105mΩ,RDS(on) Max@4.5V: 170mΩ,Qg(Typ): 31nC,Rth(JC): 1.9K/W,Power Dissipation@TC 25C: 79W,Id@TC 25C: -14A
- P溝道功率MOS管,Vbrdss: -55V,Vgs: 20V,RDS(on) Max@10V: 105.0mΩ,RDS(on) Max@4.5V: 170.0mΩ,Qg(Typ): 31.0nC,Rth(JC): 1.9K/W,Power Dissipation@TC 25C: 79W,Id@TC 25C: -20A
- P溝道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 98.0m?,RDS(on) Max@4.5V: 165.0mΩ,Qg(Typ): 9.5nC,Rth(JC): 100 (JA)K/W
- P溝道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 200.0mΩ,Qg(Typ): 38.7nC,Rth(JC): 1.9K/W,Power Dissipation@TC 25C: 3.8W,Id@TC 25C: -14A