更新于 2025-12-04
電氣特性 Features
- N溝道功率MOS管
- Vbrdss: 30V
- Vgs: 20V
- RDS(on) Max@10V: 4.0mΩ
IRF7832
相關(guān)文章
- N溝道功率MOS管,Vbrdss: 55V,Vgs: 16V,RDS(on) Max@10V: 8.0mΩ,Id: 86A
- N溝道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 16.0mΩ,Id: 19A
- N溝道功率MOS管,Vbrdss: 60V,Vgs: 20V,RDS(on) Max@10V: 2.4mΩ,Id: 195A
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 20 V |
| Maximum Continuous Drain Current: | 30 mA |
| Maximum Drain Gate Voltage: | 20 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
電氣特性 Features
電氣特性 Features
電氣特性 Features
| Configuration: | Dual |
| Channel Type: | N |
| Maximum Drain Gate Voltage: | -50 V |
| Operating Temperature: | -55 to 125 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |