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FGH75T65UPD_F085

FGH75T65UPD_F085

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:150 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No
IGBT管-IGBT模塊 更新于 2025-12-17 Tag標(biāo)簽:IGBT管-IGBT模塊

IRG4PC60F

電氣特性 Features

  • 高速(1-8kHz)IGBT模塊
  • Vces: 600V
  • Ic@100℃: 60A
  • Vce(ON)@25℃(typ): 1.50V
IGBT管-IGBT模塊 更新于 2025-12-17 Tag標(biāo)簽:IGBT管-IGBT模塊

STGWT60H65FB

STGWT60H65FB

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No
IGBT管-IGBT模塊 更新于 2025-12-17 Tag標(biāo)簽:IGBT管-IGBT模塊

IRG4BC20KD

電氣特性 Features

  • 超高速(8-30kHz)IGBT模塊
  • Vces: 600V
  • Ic@100℃: 9.0A
  • Vce(ON)@25℃(typ): 2.27V
IGBT管-IGBT模塊 更新于 2025-12-17 Tag標(biāo)簽:IGBT管-IGBT模塊

STGW35HF60WDI

STGW35HF60WDI

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No
IGBT管-IGBT模塊 更新于 2025-12-17 Tag標(biāo)簽:IGBT管-IGBT模塊

IRG4IBC30KD

電氣特性 Features

  • 超高速(8-30kHz)IGBT模塊
  • Vces: 600V
  • Ic@100℃: 9.2A
  • Vce(ON)@25℃(typ): 2.21V
IGBT管-IGBT模塊 更新于 2025-12-17 Tag標(biāo)簽:IGBT管-IGBT模塊

IRG4BC15MD

電氣特性 Features

  • 高速(1-8kHz)IGBT模塊
  • Vces: 600V
  • Ic@100℃: 8.6A
  • Vce(ON)@25℃(typ): 1.88V
IGBT管-IGBT模塊 更新于 2025-12-17 Tag標(biāo)簽:IGBT管-IGBT模塊

IRGP4620DPBF

IRGP4620DPBF

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:32 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No
IGBT管-IGBT模塊 更新于 2025-12-17 Tag標(biāo)簽:IGBT管-IGBT模塊

IRGP4263PBF

IRGP4263PBF

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:90 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No
IGBT管-IGBT模塊 更新于 2025-12-17 Tag標(biāo)簽:IGBT管-IGBT模塊

IRG4BC20UPBF

IRG4BC20UPBF

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:13 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No
IGBT管-IGBT模塊 更新于 2025-12-17 Tag標(biāo)簽:IGBT管-IGBT模塊

IRG4PSC71UD

電氣特性 Features

  • 超高速(8-30kHz)IGBT模塊
  • Vces: 600V
  • Ic@100℃: 60A
  • Vce(ON)@25℃(typ): 1.67V
IGBT管-IGBT模塊 更新于 2025-12-17 Tag標(biāo)簽:IGBT管-IGBT模塊

IRG4PC40FPBF

IRG4PC40FPBF

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:49 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No
IGBT管-IGBT模塊 更新于 2025-12-17 Tag標(biāo)簽:IGBT管-IGBT模塊

STGB18N40LZT4

STGB18N40LZT4

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:360 V
Maximum Continuous Collector Current:30 A
Maximum Gate Emitter Voltage:12 V
Mounting:Surface Mount
Rad Hard:No
IGBT管-IGBT模塊 更新于 2025-12-17 Tag標(biāo)簽:IGBT管-IGBT模塊

IRG4PC40F

電氣特性 Features

  • 高速(1-8kHz)IGBT模塊
  • Vces: 600V
  • Ic@100℃: 27A
  • Vce(ON)@25℃(typ): 1.50V
IGBT管-IGBT模塊 更新于 2025-12-17 Tag標(biāo)簽:IGBT管-IGBT模塊

IRG4PC30S

電氣特性 Features

  • DC-1kHz(標(biāo)準(zhǔn))IGBT模塊
  • Vces: 600V
  • Ic@100℃: 18A
  • Vce(ON)@25℃(typ): 1.95V
IGBT管-IGBT模塊 更新于 2025-12-17 Tag標(biāo)簽:IGBT管-IGBT模塊