更新于 2025-12-05電氣特性 Features
- P溝道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 600.0mΩ
- RDS(on) Max@4.5V: 1000.0mΩ
- Qg(Typ): 3.4nC
- Rth(JC): 230 (JA)K/W
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- P溝道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 98.0mΩ,RDS(on) Max@4.5V: 165.0mΩ,Qg(Typ): 9.5nC,Rth(JC): 100 (JA)K/W
- P溝道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 20.0mΩ,RDS(on) Max@4.5V: 35.0mΩ,Qg(Typ): 61.0nC,Rth(JC): 50 (JA)K/W
- P溝道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 205mΩ,Qg(Typ): 38.7nC,Rth(JC): 1.9K/W,Power Dissipation@TC 25C: 66W,Id@TC 25C: -8.2A
- P溝道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 70.0m?,RDS(on) Max@4.5V: 130.0mΩ,Qg(Typ): 27.0nC,Rth(JC): 50 (JA)K/W
- P溝道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 90.0mΩ,RDS(on) Max@4.5V: 150.0mΩ,Qg(Typ): 20.0nC,Rth(JC): 70 (JA)K/W