更新于 2025-12-05電氣特性 Features
- P溝道功率MOS管
- Vbrdss: -55V
- Vgs: 20V
- RDS(on) Max@10V: 20.0mΩ
- Qg(Typ): 120.0nC
- Rth(JC): 0.75K/W
- Power Dissipation@TC 25C: 170W
- Id@TC 25C: -74A
相關文章
- P溝道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 200.0mΩ,RDS(on) Max@4.5V: 400.0mΩ,Qg(Typ): 7.2nC,Rth(JC): 75 (JA)K/W
- P溝道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: 54.0mΩ,Qg(Typ): 6.9nC,Rth(JC): 100 (JA)K/W
- P溝道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 60.0mΩ,Qg(Typ): 120.0nC,Rth(JC): 0.75K/W,Power Dissipation@TC 25C: 200W,Id@TC 25C: -40A
電氣特性 Features
電氣特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |
電氣特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |