更新于 2025-12-09電氣特性 Features
- N溝道功率MOS管
- Vbrdss: 55V
- Vgs: 20V
- RDS(on) Max@10V: 57.5mΩ
相關(guān)文章
- N溝道功率MOS管,Vbrdss: 200V,Vgs: 20V,RDS(on) Max@10V: 300.0mΩ,Id: 9.5A
- N溝道功率MOS管,Vbrdss: 100V,Vgs: 20V,RDS(on) Max@10V: 18.0mΩ
- N溝道功率MOS管,Vbrdss: 75V,Vgs: 20V,RDS(on) Max@10V: 11.2mΩ,Id: 42A
- N溝道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 3.5mΩ,Id: 76A
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Gate Source Voltage: | -35 V |
| Maximum Drain Gate Voltage: | 35 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |