更新于 2025-12-06
電氣特性 Features
- N溝道功率MOS管
- Vbrdss: 60V
- Vgs: 20V
- RDS(on) Max@10V: 26.0mΩ
IRF7478PBF-1
相關文章
- N溝道功率MOS管,Vbrdss: 150V,Vgs: 30V,RDS(on) Max@10V: 32.0mΩ,Id: 60A
- N溝道功率MOS管,Vbrdss: 200V,Vgs: 30V,RDS(on) Max@10V: 170.0mΩ
- N溝道功率MOS管,Vbrdss: 100V,Vgs: 20V,RDS(on) Max@10V: 115.0mΩ,Id: 11A
- N溝道功率MOS管,Vbrdss: 100V,Vgs: 20V,RDS(on) Max@10V: 13.9mΩ,Id: 63A
電氣特性 Features
| Configuration: | Single Dual Gate |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 15 V |
| Maximum Continuous Drain Current: | 30 mA |
| Maximum Gate Source Voltage: | 8 V |
| Operating Temperature: | -55 to 125 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |