更新于 2025-12-05
電氣特性 Features
- N溝道功率MOS管
- Vbrdss: 30V
- Vgs: 20V
IRF7807VPBF-1
相關(guān)文章
- N溝道功率MOS管,Vbrdss: 30V,Vgs: 16V,RDS(on) Max@10V: 7.0mΩ,Id: 116A
- N溝道功率MOS管,Vbrdss: 200V,Vgs: 20V,RDS(on) Max@10V: 22.0mΩ,Id: 72A
- N溝道功率MOS管,Vbrdss: 150V,Vgs: 20V,RDS(on) Max@10V: 95.0mΩ,Id: 17A
電氣特性 Features
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Gate Source Voltage: | -35 V |
| Maximum Drain Gate Voltage: | 35 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Continuous Drain Current: | 14 mA |
| Maximum Drain Gate Voltage: | -50 V |
| Operating Temperature: | -55 to 125 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |