更新于 2025-12-04
電氣特性 Features
- 集成肖特基二極管的N溝道功率MOS管
- Vbrdss: 30V
- Vgs: 20V
- RDS(on) Max@10V: 25.0mΩ
IRF7807VD1PBF-1
相關(guān)文章
- N溝道功率MOS管,Vbrdss: 100V,Vgs: 20V,RDS(on) Max@10V: 12.4mΩ,Id: 63A
- 集成肖特基二極管的N溝道功率MOS管,Vbrdss: 25V,Vgs: 20V,RDS(on) Max@10V: 1.8mΩ,Id: 160A
- N溝道功率MOS管,Vbrdss: 55V,Vgs: 20V,RDS(on) Max@10V: 17.5mΩ,Id: 35A
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 20 V |
| Maximum Continuous Drain Current: | 40 mA |
| Maximum Gate Source Voltage: | -20 V |
| Maximum Drain Gate Voltage: | 20 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 15 V |
| Maximum Continuous Drain Current: | 50 mA |
| Maximum Drain Gate Voltage: | -15 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |