首頁 > 產(chǎn)品展示 > 場(chǎng)效應(yīng)管(MosFET) > N溝道場(chǎng)效應(yīng)管 MMBFJ112 MMBFJ112 更新于 2025-12-04 電氣特性 FeaturesConfiguration:SingleChannel Type:NMaximum Gate Source Voltage:-35 VMaximum Drain Gate Voltage:35 VOperating Temperature:-55 to 150 ℃Mounting:Surface MountRad Hard:No Tag標(biāo)簽:N溝道場(chǎng)效應(yīng)管