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IGB20N60H3ATMA1

IGB20N60H3ATMA1

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

IRG4PF50WDPBF

IRG4PF50WDPBF

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:900 V
Maximum Continuous Collector Current:51 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

IRGC4067B

電氣特性 Features

  • 超高速(8-30kHz)IGBT模塊
  • Vces: 600V
  • Vce(ON)@25℃(typ): 1.7V
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

FGH60N60SMD

FGH60N60SMD

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:120 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

IRGP6630DPBF

IRGP6630DPBF

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:47 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

IRG4RC10U

電氣特性 Features

  • 超高速(8-30kHz)IGBT模塊
  • Vces: 600V
  • Ic@100℃: 5A
  • Vce(ON)@25℃(typ): 2.15V
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

IGA03N120H2

IGA03N120H2

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:3 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

NGD8205ANT4G

NGD8205ANT4G

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:390 V
Maximum Continuous Collector Current:20 A
Maximum Gate Emitter Voltage:±15 V
Mounting:Surface Mount
Rad Hard:No
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

IRG4RC10UTRPBF

IRG4RC10UTRPBF

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:8.5 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

FGL40N120ANTU

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:64 A
Maximum Gate Emitter Voltage:±25 V
Mounting:Through Hole
Rad Hard:No
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

IGW60T120FKSA1

IGW60T120FKSA1

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:100 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

IRG4CC20UB

電氣特性 Features

  • 超高速(8-30kHz)IGBT模塊
  • Vces: 600V
  • Vce(ON)@25℃(typ): 1.85V
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

IKP20N65H5XKSA1

IKP20N65H5XKSA1

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:20 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

IRG4BC20U

電氣特性 Features

  • 超高速(8-30kHz)IGBT模塊
  • Vces: 600V
  • Ic@100℃: 6.5A
  • Vce(ON)@25℃(typ): 1.85V
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

IRG7CH54K10EF-R

電氣特性 Features

  • 超高速(8-30kHz)IGBT模塊
  • Vces: 1200V
  • Vce(ON)@25℃(typ): 1.90V
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊