IGBT管-IGBT模塊
IKW40N120H3
電氣特性 Features
| Configuration: | Single Quad Collector Triple Emitter |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 400 V |
| Maximum Gate Emitter Voltage: | ±6 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
更新于 2025-12-07STGF19NC60HD
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 16 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
HGT1S10N120BNS
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 35 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IRGP4740D
電氣特性 Features
- 超高速(8-30kHz)IGBT模塊
- Vces: 650V
- Ic@100℃: 40A
- Vce(ON)@25℃(typ): 1.7V
IRG7PH42UD1PBF
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 85 A |
| Maximum Gate Emitter Voltage: | ±30 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IRG7PSH73K10PBF
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 220 A |
| Maximum Gate Emitter Voltage: | ±30 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IRGP4062D
電氣特性 Features
- 超高速(8-30kHz)IGBT模塊
- Vces: 600V
- Ic@100℃: 24A
- Vce(ON)@25℃(typ): 1.60V
IKB06N60TATMA1
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 12 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IRGPS40B120UD
電氣特性 Features
- 超高速(8-30kHz)IGBT模塊
- Vces: 1200V
- Ic@100℃: 40A
- Vce(ON)@25℃(typ): 3.12V
FGB3040G2_F085
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 430 V |
| Maximum Continuous Collector Current: | 41 A |
| Maximum Gate Emitter Voltage: | ±10 V |
| Mounting: | Surface Mount |
| Operating Temperature: | -55 to 175 ℃ |
| Rad Hard: | No |
IRG4BC30UD
電氣特性 Features
- 超高速(8-30kHz)IGBT模塊
- Vces: 600V
- Ic@100℃: 12A
- Vce(ON)@25℃(typ): 1.95V
IGP30N60H3XKSA1
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 60 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IRGP20B60PDHR
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 40 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
FGH20N60UFDTU
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 40 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IRG4PH20K
電氣特性 Features
- 超高速(8-30kHz)IGBT模塊
- Vces: 1200V
- Ic@100℃: 5A
- Vce(ON)@25℃(typ): 3.17V