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VS-ST223C08CFN0

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:390 A
Surge Current Rating:6130 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.58@600A V
Repetitive Peak Off-State Current:40 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST730C08L0

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:990 A
Surge Current Rating:18700 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.62@2000A V
Repetitive Peak Off-State Current:80 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

FODM124

電氣特性 Features

  • DC(直流)檢測輸入,光電晶體管輸出的光電耦合器
  • 4-pin Full Pitch MFP Phototransistor Output Optocoupler
  • Phototransistor Output - DC Sensing Input
光電耦合器(光耦) 更新于 2025-12-10 Tag標(biāo)簽:光電耦合器(光耦)

VS-ST180S12P0V

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:200 A
Surge Current Rating:5230 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.75@570A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

TISP4400M3BJR-S

TISP4400M3BJR-S

電氣特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:300 V
Maximum Holding Current:350 mA
Surge Current Rating:32 A
Repetitive Peak Forward Blocking Voltage:300 V
Peak On-State Voltage:3@5A V
Repetitive Peak Off-State Current:0.005 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

TN1215-800G-TR

TN1215-800G-TR

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:30 mA
Rated Average On-State Current:8 A
Surge Current Rating:145 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.6@24A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:15 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

FODM3083

電氣特性 Features

  • 800V/5mA過零可控硅驅(qū)動(dòng)器
  • 800V 5mA Zero Crossing Triac, MFP
  • Zero Crossing TRIAC Driver
光電耦合器(光耦) 更新于 2025-12-10 Tag標(biāo)簽:光電耦合器(光耦)

VS-ST1200C12K0

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:1650 A
Surge Current Rating:32000 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.73@4000A V
Repetitive Peak Off-State Current:100 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-T50RIA120

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:200 mA
Rated Average On-State Current:50 A
Surge Current Rating:1370 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.6 V
Repetitive Peak Off-State Current:0.1 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:100 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-80RIA120

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:200 mA
Rated Average On-State Current:80 A
Surge Current Rating:1990 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.6@250A V
Repetitive Peak Off-State Current:15 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:120 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

TS1220-600B-TR

TS1220-600B-TR

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:5 mA
Rated Average On-State Current:8 A
Surge Current Rating:115 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.6@24A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:0.8 V
Maximum Gate Trigger Current:0.2 mA
Maximum Gate Peak Inverse Voltage:8(Min) V
Operating Temperature:-40 to 125 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

TYN412RG

TYN412RG

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:30 mA
Rated Average On-State Current:8 A
Surge Current Rating:125 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.6@24A V
Repetitive Peak Off-State Current:0.01 mA
Maximum Gate Trigger Voltage:1.5 V
Maximum Gate Trigger Current:15 mA
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST330S16P0

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1600 V
Maximum Holding Current:600 mA
Rated Average On-State Current:330 A
Surge Current Rating:9420 A
Repetitive Peak Forward Blocking Voltage:1600 V
Peak On-State Voltage:1.52@1000A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

MOCD211M

MOCD211M

電氣特性 Features

  • 雙通道光電晶體管輸出光電耦合器,DC直流輸入
  • 8-Pin SOIC Dual Channel Phototransistor Output Optocoupler
  • Phototransistor Output - DC Sensing Input
光電耦合器(光耦) 更新于 2025-12-10 Tag標(biāo)簽:光電耦合器(光耦)

VS-ST1200C14K0

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:1650 A
Surge Current Rating:32000 A
Repetitive Peak Forward Blocking Voltage:1400 V
Peak On-State Voltage:1.73@4000A V
Repetitive Peak Off-State Current:100 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)