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FOD8332

FOD8332

電氣特性 Features

  • 輸入LED驅(qū)動(dòng),2.5 A輸出電流,IGBT驅(qū)動(dòng)的光電耦合器.帶有去飽和檢測(cè),隔離故障檢測(cè)和有源米勒鉗位
  • Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing, and Active Miller Clamp
  • IGBT/MOSFET Gate Drivers
光電耦合器(光耦) 更新于 2025-12-06 Tag標(biāo)簽:光電耦合器(光耦)

TISP7150F3DR-S

電氣特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:120 V
Maximum Holding Current:150(Min) mA
Surge Current Rating:4.3 A
Repetitive Peak Forward Blocking Voltage:120 V
Peak On-State Voltage:5@5A V
Repetitive Peak Off-State Current:0.01 mA
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
可控硅(晶閘管) 更新于 2025-12-06 Tag標(biāo)簽:可控硅(晶閘管)

FOD814A

電氣特性 Features

  • 光電晶體管輸出光電耦合器
  • 4-Pin DIP Phototransistor Output Optocoupler
  • Phototransistor Output - AC Sensing Input
光電耦合器(光耦) 更新于 2025-12-06 Tag標(biāo)簽:光電耦合器(光耦)

FODM124

電氣特性 Features

  • DC(直流)檢測(cè)輸入,光電晶體管輸出的光電耦合器
  • 4-pin Full Pitch MFP Phototransistor Output Optocoupler
  • Phototransistor Output - DC Sensing Input
光電耦合器(光耦) 更新于 2025-12-06 Tag標(biāo)簽:光電耦合器(光耦)

VS-ST230S16P0PBF

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1600 V
Maximum Holding Current:600 mA
Rated Average On-State Current:230 A
Surge Current Rating:5970 A
Repetitive Peak Forward Blocking Voltage:1600 V
Peak On-State Voltage:1.55@720A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-06 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST300C20C0L

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:2000 V
Maximum Holding Current:600 mA
Rated Average On-State Current:650 A
Surge Current Rating:8380 A
Repetitive Peak Forward Blocking Voltage:2000 V
Peak On-State Voltage:2.18@1635A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-06 Tag標(biāo)簽:可控硅(晶閘管)

TISP61089SDR-S

電氣特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:100 V
Maximum Holding Current:150(Min) mA
Surge Current Rating:11 A
Repetitive Peak Forward Blocking Voltage:100 V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:5 mA
Operating Temperature:-40 to 85 ℃
Mounting:Surface Mount
可控硅(晶閘管) 更新于 2025-12-06 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST223C08CFN1

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:390 A
Surge Current Rating:6130 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.58@600A V
Repetitive Peak Off-State Current:40 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-06 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST333C08CFL0

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:720 A
Surge Current Rating:11500 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.96@1810A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-06 Tag標(biāo)簽:可控硅(晶閘管)

VS-T90RIA120S90

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:200 mA
Rated Average On-State Current:90 A
Surge Current Rating:1780 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.55 V
Repetitive Peak Off-State Current:15 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:120 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
可控硅(晶閘管) 更新于 2025-12-06 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST180S04P1VPBF

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:200 A
Surge Current Rating:5230 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.75@570A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-06 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST700C12L0L

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:910 A
Surge Current Rating:16400 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.8@2000A V
Repetitive Peak Off-State Current:80 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-06 Tag標(biāo)簽:可控硅(晶閘管)

MOC3022M

電氣特性 Features

  • 400V隨機(jī)相位可控硅驅(qū)動(dòng)器輸出光電耦合器
  • 6-Pin DIP 400V Random Phase Triac Driver Output Optocoupler
  • Random Phase TRIAC Driver
光電耦合器(光耦) 更新于 2025-12-06 Tag標(biāo)簽:光電耦合器(光耦)

VS-25TTS08SPBF

VS-25TTS08SPBF

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:100 mA
Rated Average On-State Current:16 A
Surge Current Rating:350 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.25@16A V
Repetitive Peak Off-State Current:0.5 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:45 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-06 Tag標(biāo)簽:可控硅(晶閘管)

TISP8201MDR-S

電氣特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:120 V
Maximum Holding Current:20(Min) mA
Surge Current Rating:11 A
Repetitive Peak Forward Blocking Voltage:120 V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Current:5 mA
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-06 Tag標(biāo)簽:可控硅(晶閘管)