更新于 2025-12-09電氣特性 Features
- 集成肖特基二極管的P溝道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 200.0mΩ
- RDS(on) Max@4.5V: 400.0m?
- Qg(Typ): 7.5nC
- Rth(JC): 100 (JA)K/W
相關(guān)文章
- P溝道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: 600.0mΩ,Qg(Typ): 2.4nC,Rth(JC): 230 (JA)K/W
- P溝道功率MOS管,Vbrdss: -30V,Vgs: 25V,RDS(on) Max@10V: 17.5mΩ,Qg(Typ): 14.0nC,Rth(JC): 50 (JA)K/W
- P溝道功率MOS管,Vbrdss: -55V,Vgs: 20V,RDS(on) Max@10V: 65.0mΩ,Qg(Typ): 42.0nC,Rth(JC): 1.4K/W,Power Dissipation@TC 25C: 89W,Id@TC 25C: -28A
- P溝道功率MOS管,Vbrdss: -30V,Vgs: 25V,RDS(on) Max@10V: 19.4mΩ,Qg(Typ): 14.0nC,Rth(JC): 50 (JA)K/W
電氣特性 Features
電氣特性 Features
電氣特性 Features
電氣特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |